论文信息 - High-reliability GaAs HBT monolithic microwave amplifier

High-reliability GaAs HBT monolithic microwave amplifier

High-reliability performance of an X-band high-intercept MMIC amplifier fabricated using a production GaAs/AlGaAs HBT process technology is reported. Operating at 20 kA/cm/sup 2/ quiescent collector current density, the single-stage balanced amplifier with on-chip regulation has a projected median-time-to-failure (MTF) of 4/spl times/10/sup 7/ hours at a 125/spl deg/C junction temperature. MTF was determined by three-temperature constant-stress accelerated lifetest using |/spl Delta/S21|>1.0 dB as the failure criterion. Additionally, an activation energy (Ea) of 1.2 eV and log-standard deviation (/spl sigma/) of 0.7 was measured. This is the first report of HBT reliability based on small-signal microwave characteristics of HBT MMIC amplifiers under lifetest.

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