A novel approach to extracting extrinsic resistances for equivalent circuit model of nanoscale MOSFET

A novel extrinsic resistance extraction method of MOSFET at Vgs=Vds=0V from S-parameter measurements is presented in this paper. Simulated and measured results of 90-nm gatelength MOSFET device with a 8×0.6×12µm gatewidth number of gate finger×unit gate width×cells are compared, and good agreement has been obtained up to 50GHz. Furthermore, comparisons between the proposed approach and other three methods published are also made in this paper. Copyright © 2016 John Wiley & Sons, Ltd.

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