Design techniques for a low-power low-cost CMOS A/D converter

A 10 bit 200 kHz algorithmic analog-to-digital converter (ADC) was designed to demonstrate design techniques for low-power low-cost CMOS integrated systems. A switched-bias power-reduction technique reduces the total system power by 10%. A layout technique employing extra thin poly-layer lines instead of conventional dummy devices reduces plasma-induced comparator offsets. Based on a standard digital CMOS process with a single poly layer, the ADC adopts metal-to-metal capacitors for internal charge storage. The experimental ADC was fabricated in a 0.6 /spl mu/m single-poly double-metal n-well CMOS technology, and showed a power consumption of 7 mW and a signal-to-noise-and-distortion ratio (SNDR) of 53 dB at the Nyquist sampling rate with a 3.3 V single supply voltage. The measured differential and integral nonlinearities of the prototype are less than /spl plusmn/0.8 and /spl plusmn/1.8 LSB, respectively.

[1]  H. Chan,et al.  Temperature dependence of charge generation and breakdown in SiO 2 , 1986 .

[2]  Paul R. Gray,et al.  A power optimized 13-bit 5M samples/s pipelined analog to digital converter in 1.2 /spl mu/m CMOS , 1995, Proceedings of the IEEE 1995 Custom Integrated Circuits Conference.

[3]  Masao Hotta,et al.  A 10b 3MSample/s CMOS cyclic ADC , 1995, Proceedings ISSCC '95 - International Solid-State Circuits Conference.

[4]  Chenming Hu,et al.  Effects of temperature and defects on breakdown lifetime of thin SiO/sub 2/ at very low voltages , 1994 .

[5]  Hae-Seung Lee,et al.  A 2.5 V 12 b 5 MSample/s pipelined CMOS ADC , 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.

[6]  Jieh-Tsorng Wu,et al.  A 100-MHz pipelined CMOS comparator , 1988 .

[7]  R. Castello,et al.  A ratio-independent algorithmic analog-to-digital conversion technique , 1984, IEEE Journal of Solid-State Circuits.

[8]  Robert G. Meyer,et al.  Analysis and Design of Analog Integrated Circuits , 1993 .

[9]  Shin-Il Lim,et al.  A 12 b 10 MHz 250 mW CMOS A/D converter , 1996 .

[10]  Stephen H. Lewis,et al.  A 250-mW, 8-b, 52-Msamples/s parallel-pipelined A/D converter with reduced number of amplifiers , 1997, IEEE J. Solid State Circuits.

[11]  Shawming Ma,et al.  Effects of wafer temperature on plasma charging induced damage to MOS gate oxide , 1995, IEEE Electron Device Letters.

[12]  Paul R. Gray,et al.  A CMOS programmable self-calibrating 13-bit eight-channel data acquisition peripheral , 1987 .

[13]  Bang-Sup Song,et al.  Digital-domain calibration of multistep analog-to-digital converters , 1992 .

[14]  Chenming Hu,et al.  Temperature acceleration of time-dependent dielectric breakdown , 1989 .

[15]  P. P. Apte,et al.  Correlation of trap generation to charge-to-breakdown (Q/sub bd/): a physical-damage model of dielectric breakdown , 1994 .

[16]  Chenming Hu,et al.  Simulating process-induced gate oxide damage in circuits , 1997 .

[17]  K. Nagaraj Efficient circuit configurations for algorithmic analog to digital converters , 1993 .