NOR virtual ground (NVG)-a new scaling concept for very high density flash EEPROM and its implementation in a 0.5 um process
暂无分享,去创建一个
A new NOR virtual ground flash cell array concept is introduced. A 2.4 um/sup 2/ cell size based on a 0.5 um process is realized, which is a 35% cell size reduction compared with the conventional NOR cell.<<ETX>>
[1] G. Atwood,et al. Erratic Erase In ETOX/sup TM/ Flash Memory Array , 1993, Symposium 1993 on VLSI Technology.
[2] B. Eitan,et al. Alternate metal virtual ground (AMG)-a new scaling concept for very high-density EPROMs , 1991, IEEE Electron Device Letters.