Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

We present a 1.3-μm GaInNAs/GaAs quantum-well heterostructure, which consists of a strain-mediating GaInNAs layer grown between a compressive-strained quantum well and a tensile-strained GaNAs layer. Compared to a similar sample with no strain-mediating layer, this heterostructure exhibits improved material properties and remarkable redshift of emission with enhanced light intensity. The observations are based on photoluminescence spectra and x-ray diffraction data measured for the active region of the samples.

[1]  S. Illek,et al.  Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes , 2000, IEEE Photonics Technology Letters.

[2]  Hartmann,et al.  Exciton dynamics in InxGa1-xAs/GaAs quantum-well heterostructures: Competition between capture and thermal emission. , 1993, Physical review. B, Condensed matter.

[3]  Samuelson,et al.  Photoluminescence study of localization effects induced by the fluctuating random alloy potential in indirect band-gap GaAs1-xPx. , 1985, Physical review. B, Condensed matter.

[4]  F. Koyama,et al.  A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers , 1997, IEEE Photonics Technology Letters.

[5]  C. W. Tu,et al.  Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy , 1999 .

[6]  Weikun Ge,et al.  Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy , 2000 .

[7]  S. G. Spruytte,et al.  Nitrogen incorporation in group III–nitride–arsenide materials grown by elemental source molecular beam epitaxy , 2001 .

[8]  Takeshi Kitatani,et al.  GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance , 1996 .

[9]  Wladek Walukiewicz,et al.  Band Anticrossing in GaInNAs Alloys , 1999 .

[10]  T. Jouhti,et al.  Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy , 2001 .

[11]  M. Adams,et al.  The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1 − xAs1 − yNy/GaAs laser structures , 2001 .

[12]  Martin D. Dawson,et al.  Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content , 2000 .

[13]  T. Saiki,et al.  Near-field photoluminescence study of GaNAs alloy epilayer at room and cryogenic temperature , 2001 .

[14]  Takeshi Kitatani,et al.  Effects of thermal annealing procedure and a strained intermediate layer on a highly-strained GaInNAs/GaAs double-quantum-well structure , 2000 .

[15]  Su-Huai Wei,et al.  Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys , 1997 .