论文信息 - Full (V g , V d ) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. - 字舞流文

Full (V g , V d ) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.

H. Mertens | A. Chasin | D. Linten | B. Kaczer | G. Groeseneken | E. Bury | A. Makarov | S. Tyaginov | M. Vandemaele | Z. Stanojević