Productivity of an ion implantation process is one of the critical issues for device fabrication. Reduction of implant area is a key factor to increase beam utilization for high-current implanters. SEN has already developed the X-, Y- and D-SAVING systems to address this issue. These allow reduction of beam scan length horizontally along the center line, vertically and horizontally along the right hand side of the wafer off the center line, respectively. These SAVING systems are is use for volume manufacturing by several semiconductor fabs. The F-SAVING system is the latest development for the SHX-III. One of the most important features in the F-SAVING system is the introduction of two-dimensional information on beam size for additional reduction of implant area. In this report, detail concepts of the F-SAVING system will be discussed.