A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array

In this paper, an octagonal shorted annular ring (OSAR) antenna array is presented based on 130-nm SiGe BiCMOS technology without any post-processes. The OSAR antenna consists of annular ring patch, an array of shorted pins and ground which is formed a cavity to enhance the gain and reduce surface waves. The <inline-formula> <tex-math notation="LaTeX">$1\times 2$ </tex-math></inline-formula> OSAR antenna array is designed and fabricated with the die area of <inline-formula> <tex-math notation="LaTeX">$550\times 1100~\mu m^{2}$ </tex-math></inline-formula>. The measured −10-dB impedance bandwidth is more than 17 GHz (303-320 GHz). The proposed on-chip antenna array is achieved a measurement perk gain of 4.1 dBi at 320 GHz and the simulated radiation efficiency of 38 %.

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