An advanced soft punch through buffer design for thin wafer IGBTs targeting lower losses and higher operating temperatures up to 200 °C

A shallow phosphorus buffer peak has been added to state-of-the-art planar soft punch through IGBT buffer (1200 V and 1700 V, 150 A, 13.6 × 13.6 mm2) to lower the leakage current and expand the temperature operation range up to 200°C. The new buffer design is experimentally demonstrated to provide rugged switching (RBSOA) up to 200°C without compromising other high performance characteristics like soft switching and short circuit capability.

[1]  Munaf Rahimo,et al.  Extending the boundary limits of high voltage IGBTs and diodes to above 8 kV , 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

[2]  Bruno Allard,et al.  Transient temperature measurements and modeling of IGBT's under short circuit , 1998 .

[3]  Y. Ishimura,et al.  Advanced wide cell pitch CSTBTs having light punch-through (LPT) structures , 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

[4]  Munaf Rahimo,et al.  Novel Soft-Punch-Through (SPT) 1700V IGBT Sets Benchmark on Technology Curve , 2001 .

[5]  S. Linder,et al.  Exploring the Silicon Design Limits of Thin Wafer IGBT Technology: The Controlled Punch Through (CPT) IGBT , 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

[6]  U. Schlapbach,et al.  1200V IGBTs operating at 200°C? An investigation on the potentials and the design constraints , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.