Correlation between substrate and gate currents in MOSFET's

A correlation between substrate and gate currents in MOSFET's is described and analyzed. Both of these currents are the result of hot-electron mechanisms. Theory for these mechanisms has been applied to derive an expression for gate current in terms of substrate current and parameters that can be calculated from processing data and bias conditions. The theory is successfully applied to a series of n-channel MOSFET's with a range of geometries and bias values.

[1]  C. N. Berglund,et al.  Photoinjection into SiO2: Electron Scattering in the Image Force Potential Well , 1971 .

[2]  R.H. Dennard,et al.  1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints , 1979, IEEE Transactions on Electron Devices.

[3]  R. Troutman,et al.  Low-level avalanche multiplication in IGFET's , 1976, IEEE Transactions on Electron Devices.

[4]  Y.A. El-Mansy,et al.  Modelling weak avalanche multiplication currents in IGFETS and SOS transistors for CAD , 1975, 1975 International Electron Devices Meeting.

[5]  C. R. Crowell,et al.  Temperature dependence of avalanche multiplication in semiconductors , 1966 .

[6]  Sura Adil Abbas,et al.  N-channel IGFET design limitations due to hot electron trapping , 1975 .

[7]  Y.W. Sing,et al.  Modeling and VLSI design constraints of substrate current , 1980, 1980 International Electron Devices Meeting.

[8]  Peter E. Cottrell,et al.  Hot-electron emission in N-channel IGFET's , 1979 .

[9]  R. Muller,et al.  A unified model for hot-electron currents in MOSFET's , 1981, 1981 International Electron Devices Meeting.

[10]  B. Eitan,et al.  Hot-electron injection into the oxide in n-channel MOS devices , 1981, IEEE Transactions on Electron Devices.

[11]  Tak H. Ning,et al.  1 pm MOSFET VLSI Technology: Part lV— Hot-Electron Design Constraints , 1979 .

[12]  Chenming Hu,et al.  Electron trapping in very thin thermal silicon dioxides , 1981, 1981 International Electron Devices Meeting.

[13]  C. R. Crowell,et al.  Temperature dependence of avalanche multiplication in semiconductors , 1966 .

[14]  Tak H. Ning,et al.  Emission probability of hot electrons from silicon into silicon dioxide , 1977 .

[15]  M. Hirayama,et al.  Effect of long-term stress on IGFET degradations due to hot electron trapping , 1981, IEEE Transactions on Electron Devices.