论文信息 - In-plane quantum energy control of InGaAs/InGaAsP MQW structure by MOCVD selective area growth

In-plane quantum energy control of InGaAs/InGaAsP MQW structure by MOCVD selective area growth

The controllability of in-plane Eg (in-plane bandgap energy) is investigated focusing on the mechanism of quantum energy variation for InGaAs/InGaAsP MQW (multiquantum well) structures. SAG (selective area growth) is applied to an MQW electroabsorption-modulator/distributed feedback-laser integrated light source. Eg was successfully controlled in InGaAs/InGaAsP MQW structures by simultaneous MOCVD (metal-organic chemical vapor deposition) SAG. The large photoluminescence peak wavelength variation from 1.42 to 1.58 mu m was found to result mainly from the thickness enhancement of the quantum well layer. Superior properties of the device indicate that the SAG technique is promising for photonic device integration.<<ETX>>

Kazuhisa Uomi | M. Takahashi | Makoto Suzuki | Toshihiro Kawano | M. Aoki

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