Bi-layer high-k dielectrics of Al2O3/ZrO2 to reduce damage to MoS2 channel layers during atomic layer deposition

To implement two-dimensional (2D) transition metal dichalcogenides (TMDCs) in electric devices, a top-gated device structure is desired. However, there has been possibility of the channel layer being damaged during the upper dielectric deposition process. Because several layers of 2D TMDCs are atomically thin, the damage may significantly degrade the overall electrical performance. In this study, we investigated the damage to molybdenum disulfide (MoS2) during the atomic layer deposition (ALD) of single dielectrics of Al2O3 and ZrO2. We observed the MoS2 layers were damaged, depending on the ALD process conditions; the kind of oxidant and the growth temperature. To reduce the damage, we formed a bi-layered Al2O3/ZrO2 dielectric structure by developing a two-step ALD process. It is notable that the electrical performance of the device was significantly improved compared to those using the single dielectrics, indicating this two-step process is a promising candidate to satisfy the requirements of future 2D TMDCs-based electronics.

[1]  Sungjoo Lee,et al.  Controlled p-doping of black phosphorus by integration of MoS 2 nanoparticles , 2018 .

[2]  S. Kim,et al.  Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor. , 2016, ACS applied materials & interfaces.

[3]  R. Wallace,et al.  Remote Plasma Oxidation and Atomic Layer Etching of MoS2. , 2016, ACS applied materials & interfaces.

[4]  S. Khondaker,et al.  Bandgap Engineering of MoS2 Flakes via Oxygen Plasma: A Layer Dependent Study , 2016 .

[5]  G. Ryu,et al.  Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer , 2015, Nature Communications.

[6]  R. Wallace,et al.  Surface oxidation energetics and kinetics on MoS2 monolayer , 2015 .

[7]  R. Wallace,et al.  Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone , 2014, ACS applied materials & interfaces.

[8]  S. Khondaker,et al.  Photoluminescence Quenching in Single-layer MoS2 via Oxygen Plasma Treatment , 2014, 1405.0646.

[9]  Robert M. Wallace,et al.  MoS2 functionalization for ultra-thin atomic layer deposited dielectrics , 2014 .

[10]  F. Xia,et al.  Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition , 2014, Nature Communications.

[11]  Min Kyu Kim,et al.  The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition , 2013 .

[12]  Pablo Jarillo-Herrero,et al.  Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2. , 2013, Nano letters.

[13]  Y. Miyauchi,et al.  Tunable photoluminescence of monolayer MoS₂ via chemical doping. , 2013, Nano letters.

[14]  Woong Choi,et al.  Improved growth behavior of atomic-layer-deposited high-k dielectrics on multilayer MoS2 by oxygen plasma pretreatment. , 2013, ACS applied materials & interfaces.

[15]  Deji Akinwande,et al.  High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems. , 2013, ACS nano.

[16]  Jakob Kibsgaard,et al.  Engineering the surface structure of MoS2 to preferentially expose active edge sites for electrocatalysis. , 2012, Nature materials.

[17]  J. Kong,et al.  Integrated circuits based on bilayer MoS₂ transistors. , 2012, Nano letters.

[18]  Kinam Kim,et al.  High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals , 2012, Nature Communications.

[19]  Andras Kis,et al.  Stretching and breaking of ultrathin MoS2. , 2011, ACS nano.

[20]  Sangyoon Lee,et al.  The Effect of Active-Layer Thickness and Back-Channel Conductivity on the Subthreshold Transfer Characteristics of Hf–In–Zn–O TFTs , 2011, IEEE Electron Device Letters.

[21]  Bret C. Windom,et al.  A Raman Spectroscopic Study of MoS2 and MoO3: Applications to Tribological Systems , 2011 .

[22]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[23]  Tatsuya Sasaoka,et al.  Highly reliable oxide‐semiconductor TFT for AMOLED displays , 2011 .

[24]  Moon J. Kim,et al.  Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices , 2010 .

[25]  J. Shan,et al.  Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.

[26]  Yuyuan Tian,et al.  Dielectric screening enhanced performance in graphene FET. , 2009, Nano letters.

[27]  Wei Mao,et al.  AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition , 2008, IEEE Electron Device Letters.

[28]  D. Jena,et al.  Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering. , 2007, Physical review letters.

[29]  Martin M. Frank,et al.  Advanced high-k dielectric stacks with polySi and metal gates: Recent progress and current challenges , 2006, IBM J. Res. Dev..

[30]  Peter Francis Carcia,et al.  High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition , 2006 .

[31]  H. Dai,et al.  DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high kappa dielectrics for nanotube transistors with 60 mV/decade switching. , 2006, Journal of the American Chemical Society.

[32]  S. George,et al.  Low-Temperature Al2O3 Atomic Layer Deposition , 2004 .

[33]  Esther Kim,et al.  Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors , 2002 .

[34]  J. P. Harbison,et al.  Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds , 1989 .

[35]  Han Liu,et al.  MoS 2 Dual-Gate MOSFET With Atomic-Layer-Deposited Al 2 O 3 as Top-Gate Dielectric , 2016 .

[36]  Jeffrey W. Elam,et al.  Low-Temperature Al 2 O 3 Atomic Layer Deposition , 2004 .