论文信息 - Double Heterojunction AlGaAsP Quaternary Lasers

Double Heterojunction AlGaAsP Quaternary Lasers

Stimulated emission in AlGaAsP is demonstrated. Double heterojunction AlGaAsP lasers grown from Ga solution on GaAsP substrates exhibit 300 °K thresholds as low as 104 A/cm2 (∼ 8450 A) and shift ∼ 450 A to shorter wavelength at 77 °K. In spite of its more complicated crystalline structure, solution‐grown AlGaAsP appears to exceed in quality vapor‐grown GaAsP.

[1] N. Holonyak,et al. AlxGa1−xAs1−y′P y′–GaAs1−yPy HETEROSTRUCTURE LASER AND LAMP JUNCTIONS , 1970 .

[2] W. Susaki,et al. Lasing action in (Ga 1-x Al x )As diodes , 1968 .

[3] I. Hayashi,et al. JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE , 1970 .

[4] H. Ehrenreich. Band Structure and Transport Properties of Some 3–5 Compounds , 1961 .

[5] Z. Alferov. AlAs-GaAs heterojunction injection lasers with a low room-temperature threshold , 1969 .