V-band high-efficiency monolithic pseudomorphic HEMT power amplifiers

V-band monolithic power amplifiers have been developed and demonstrate state-of-the-art performance. For a single-stage MMIC amplifier employing a 200- mu m pseudomorphic HEMT, 151.4 mW (757 Mw/mm) output power with 26.4% power-added efficiency at 60 GHz is achieved. Maximum power-added efficiency of 30.6% at 130-mW output power is also obtained. A three-stage MMIC amplifier utilizing the same devices demonstrated 80-mW output power, 20.5% power-added efficiency, and 17-dB associated gain at 57 GHz. The linear gain of the amplifier was 21.5 dB.<<ETX>>

[1]  Hua Quen Tserng,et al.  AlGaAs/InGaAs heterostructures with doped channels for discrete devices and monolithic amplifiers , 1989 .

[2]  P. C. Chao,et al.  A 0.15 mu m gate-length pseudomorphic HEMT , 1989, IEEE MTT-S International Microwave Symposium Digest.

[3]  P. Liu,et al.  High-power V-band pseudomorphic InGaAs HEMT , 1991, IEEE Electron Device Letters.