Numerical simulation of MOS devices with non-degenerate gate

In order to analyze implanted polysilicon-gate devices our MOS-device simulator MINIMOS has been extended to solve the basic semiconductor equations also in the poly-gate area self-consistently. Heavy doping effects in the gate as well as surface charge at the gate/oxide interface have been taken into account. The impact of some technological parameters related to the poly-gate effect on MOS-device performance is studied.