Characterization of InGaAs‐GaAs strained‐layer lasers with quantum wells near the critical thickness

Data are presented on the efficiency, reliability, and temperature dependence of wavelength and threshold for strained‐layer InxGa1−xAs‐GaAs (x∼0.25, λ>1.06 μm) separate confinement heterostructure lasers for several thicknesses near the critical thickness. Devices with well thicknesses of 100 A exhibit excellent time‐zero characteristics and reliability, while those with 143 A wells have higher initial thresholds and degrade rapidly.

[1]  C. M. Wayman,et al.  Interface structure of GaAs/AlAs semiconductor superlattices prepared by MOCVD , 1984 .

[2]  James J. Coleman,et al.  High-power phase-locked InGaAs strained-layer quantum well heterostructure periodic laser array , 1988 .

[3]  N. Holonyak,et al.  Low‐threshold disorder‐defined buried heterostructure strained‐layer AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well lasers (λ∼910 nm) , 1989 .

[4]  S. Fischer,et al.  Ridge waveguide injection laser with a GaInAs strained‐layer quantum well (λ=1 μm) , 1987 .

[5]  D. Bour,et al.  Continuous, high‐power operation of a strained InGaAs/AlGaAs quantum well laser , 1988 .

[6]  R. People,et al.  Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures , 1985 .

[7]  R. M. Kolbas,et al.  Optical characterization of pseudomorphic InxGa1−xAs–GaAs single‐quantum‐well heterostructures , 1986 .

[8]  G. Costrini,et al.  Conditions for uniform growth of GaAs by metalorganic chemical vapor deposition in a vertical reactor , 1985 .

[9]  P. Gavrilovic,et al.  Continuous operation of high-power (200 mW) strained-layer Ga1−xInxAs/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm , 1988 .

[10]  P. J. Caldwell,et al.  Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers , 1985 .

[11]  Y. J. Yang,et al.  Continuous room‐temperature operation of an InGaAs‐GaAs‐AlGaAs strained‐layer laser , 1987 .

[12]  L. R. Dawson,et al.  Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxy , 1988 .

[13]  Ying-Chih Chen,et al.  Long‐lived InGaAs quantum well lasers , 1989 .

[14]  J. W. Matthews,et al.  Defects in epitaxial multilayers , 1974 .

[15]  Lester F. Eastman,et al.  Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition , 1986 .

[16]  Y. F. Lin,et al.  Strained‐layer quantum‐well injection laser , 1984 .

[17]  James J. Coleman,et al.  InGaAs-GaAs Strained Layer Quantum Well Buried Heterostructure Lasers (λ> 1 μm) by Metalorganic Chemical Vapor Deposition , 1989, Quantum Wells for Optics and Optoelectronics.