论文信息 - MIT virtual source GaNFET‐high voltage (MVSG‐HV) model: A physics based compact model for HV‐GaN HEMTs

MIT virtual source GaNFET‐high voltage (MVSG‐HV) model: A physics based compact model for HV‐GaN HEMTs

A new physics based transport and charge model for long channel GaN HEMTs is proposed. The model is based on the concept of virtual source (VS) carrier transport (A. Khakifirooz et al., IEEE-TED 56(8), 1674 (2009) [1]) and is extended to drift diffusion regime. The model is fully scalable from non-velocity saturation to velocity saturation regime. In addition, non-linear access regions are modeled as implicit-gated transistors. Self-heating effects and self-consistent charge models are included. The model is validated against state of the art industry devices. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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[2] D. Antoniadis,et al. Physics-based GaN HEMT transport and charge model: Experimental verification and performance projection , 2012, 2012 International Electron Devices Meeting.

[3] Umesh K. Mishra,et al. GaN-Based RF Power Devices and Amplifiers , 2008, Proceedings of the IEEE.