A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

[1]  A. Dzurak,et al.  Gate-defined quantum dots in intrinsic silicon. , 2007, Nano letters.

[2]  Gerhard Klimeck,et al.  Valley splitting in strained silicon quantum wells , 2003 .

[3]  A. C. Gossard,et al.  Fast Sensing of Double-Dot Charge Arrangement and Spin State with a Radio-Frequency Sensor Quantum Dot , 2010, 1001.3585.

[4]  Z. Wasilewski,et al.  Three-dimensional transport diagram of a triple quantum dot , 2010, 1006.2331.

[5]  K. B. Whaley,et al.  Universal quantum computation with the exchange interaction , 2000, Nature.

[6]  Keeley A. Crockett,et al.  Differential charge sensing and charge delocalization in a tunable double quantum dot. , 2003, Physical review letters.

[7]  Zhan Shi,et al.  Quantum control and process tomography of a semiconductor quantum dot hybrid qubit , 2014, Nature.

[8]  H. Huebl,et al.  Electrostatically defined few-electron double quantum dot in silicon , 2009, 0904.0311.

[9]  Adele E. Schmitz,et al.  Coherent singlet-triplet oscillations in a silicon-based double quantum dot , 2012, Nature.

[10]  Todd A. Brun,et al.  Quantum Computing , 2011, Computer Science, The Hardware, Software and Heart of It.

[11]  K. B. Whaley,et al.  A prototype silicon double quantum dot with dispersive microwave readout , 2014 .

[12]  W. V. D. Wiel,et al.  Electron transport through double quantum dots , 2002, cond-mat/0205350.

[13]  C M Marcus,et al.  Magnetic field control of exchange and noise immunity in double quantum dots. , 2008, Nano letters.

[14]  W. G. van der Wiel,et al.  Electron cotunneling in a semiconductor quantum dot. , 2000, Physical review letters.

[15]  D. DiVincenzo,et al.  Quantum computation with quantum dots , 1997, cond-mat/9701055.

[16]  K. Saeedi,et al.  Room-Temperature Quantum Bit Storage Exceeding 39 Minutes Using Ionized Donors in Silicon-28 , 2013, Science.

[17]  C. Yang,et al.  Spin filling of valley–orbit states in a silicon quantum dot , 2011, Nanotechnology.

[18]  Jacob M. Taylor,et al.  Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots , 2005, Science.

[19]  R. S. Ross,et al.  Measurement of valley splitting in high-symmetry Si/SiGe quantum dots , 2010, 1012.1363.

[20]  J. P. Dehollain,et al.  Storing quantum information for 30 seconds in a nanoelectronic device. , 2014, Nature nanotechnology.

[21]  P. Matagne,et al.  Experiments And Simulations On A Few‐Electron Quantum Dot Circuit With Integrated Charge Read‐Out , 2002, cond-mat/0212489.

[22]  M. L. W. Thewalt,et al.  Quantum Information Storage for over 180 s Using Donor Spins in a 28Si “Semiconductor Vacuum” , 2012, Science.

[23]  L. Vandersypen,et al.  Spins in few-electron quantum dots , 2006, cond-mat/0610433.

[24]  Friedrich Schäffler,et al.  High-mobility Si and Ge structures , 1997 .

[25]  Paul L. McEuen,et al.  Electron Transport in Quantum Dots , 1997 .

[26]  H. Huebl,et al.  Observation of the single-electron regime in a highly tunable silicon quantum dot , 2009, 0910.0576.

[27]  A. Gossard,et al.  Manipulation of a single charge in a double quantum dot. , 2004, Physical review letters.

[28]  Adele E. Schmitz,et al.  Isotopically enhanced triple-quantum-dot qubit , 2015, Science Advances.

[29]  J. Petta,et al.  Charge relaxation in a single-electron Si/SiGe double quantum dot. , 2013, Physical review letters.

[30]  F. Stern,et al.  Electronic properties of two-dimensional systems , 1982 .

[31]  L. Vandersypen,et al.  Single-shot read-out of an individual electron spin in a quantum dot , 2004, Nature.

[32]  M. Lagally,et al.  Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot. , 2009, Nano letters.