论文信息 - An 8 Gb multi-level NAND flash memory with 63 nm STI CMOS process technology

An 8 Gb multi-level NAND flash memory with 63 nm STI CMOS process technology

An 8 Gb multi-level NAND flash memory is fabricated in a 63 nm CMOS technology with shallow trench isolation. The cell and chip sizes are 0.02 /spl mu/m/sup 2/ and 133 mm/sup 2/, respectively. Performance improves to 4.4 MB/s by using the 2/spl times/ program mode and by decreasing the cycle time from 50 ns to 30 ns. This also improves the read throughput to 23 MB/s.

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