Selectively-formed high mobility SiGe-on-Insulator pMOSFETs with Ge-rich strained surface channels using local condensation technique
暂无分享,去创建一个
A new approach to selectively form strained SiGe-on-Insulator (SGOI) channel transistors with very high Ge fraction on an SOI substrate is demonstrated. This method consists of epitaxial growth of SiGe layer with low Ge fraction and local oxidation processes. The obtained SGOI-pMOSFET with a Ge fraction of 93% has exhibited mobility enhancement up to 10 times. The thickness scalability of the SGOI channels was also confirmed down to 5 nm.
[1] T. Irisawa,et al. Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures , 2002 .
[2] Ulf Konig,et al. High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition , 2000 .
[3] F. M. Bufler,et al. HOLE TRANSPORT IN STRAINED SI1-XGEX ALLOYS ON SI1-YGEY SUBSTRATES , 1998 .