Soft-Error in SRAM at Ultra-Low Voltage and Impact of Secondary Proton in Terrestrial Environment

This paper presents soft-error measurement results through neutron and alpha irradiation tests and simulation in SRAM at ultra-low voltages, down to 0.19 V. Soft-error-rate at 0.19 V is higher than at 1.0 V by two orders of magnitude. This measurement result supported by simulation clarifies that direct ionization from secondary protons generated by nuclear reaction with neutron collision contribute to a dramatic increase in SRAM soft-error-rate at ultra-low voltages in terrestrial environment.

[1]  T. Onoye,et al.  Neutron-Induced Soft Errors and Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM , 2011, IEEE Transactions on Nuclear Science.

[2]  H. Nakashima,et al.  PHITS: Particle and Heavy Ion Transport code System, Version 2.23 , 2010 .

[4]  peixiong zhao,et al.  Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions , 2009, IEEE Transactions on Nuclear Science.

[5]  T. Uemura,et al.  Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

[6]  G. Gasiot,et al.  Multiple Cell Upsets as the Key Contribution to the Total SER of 65 nm CMOS SRAMs and Its Dependence on Well Engineering , 2007, IEEE Transactions on Nuclear Science.

[7]  Bo Wang,et al.  A 0.2V 16Kb 9T SRAM with bitline leakage equalization and CAM-assisted write performance boosting for improving energy efficiency , 2012, 2012 IEEE Asian Solid State Circuits Conference (A-SSCC).

[8]  S. Satoh,et al.  CMOS-SRAM soft-error simulation system , 1994, Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V.

[9]  T. Uemura,et al.  Mitigation technique against multi-bit-upset without area, performance and power overhead , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

[10]  J. Ziegler,et al.  stopping and range of ions in solids , 1985 .

[11]  Yukio Sakamoto,et al.  Evaluation of the White Neutron Beam Spectrum for Single-Event Effects Testing at the RCNP Cyclotron Facility , 2011 .

[12]  Shekhar Y. Borkar Exascale Computing - A Fact or a Fiction? , 2013, IPDPS.

[13]  J. Ziegler THE STOPPING AND RANGE OF IONS IN SOLIDS , 1988 .

[14]  P. Marshall,et al.  Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM , 2008, IEEE Transactions on Nuclear Science.

[15]  H.H.K. Tang,et al.  Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells , 2007, IEEE Transactions on Nuclear Science.

[16]  Anantha Chandrakasan,et al.  Sub-threshold Design for Ultra Low-Power Systems , 2006, Series on Integrated Circuits and Systems.

[17]  Hideki Oka,et al.  An Accurate and Comprehensive Soft Error Simulator NISES II , 2004 .

[18]  Marcel J. M. Pelgrom,et al.  Matching properties of MOS transistors , 1989 .

[19]  S. S. Chung,et al.  Spreading Diversity in Multi-cell Neutron-Induced Upsets with Device Scaling , 2006, IEEE Custom Integrated Circuits Conference 2006.

[20]  Robert C. Baumann,et al.  Contribution of low-energy (≪ 10 MeV) neutrons to upset rate in a 65 nm SRAM , 2010, 2010 IEEE International Reliability Physics Symposium.

[21]  Masanori Hashimoto,et al.  Alpha-particle-induced soft errors and multiple cell upsets in 65-nm 10T subthreshold SRAM , 2010, 2010 IEEE International Reliability Physics Symposium.

[22]  P.E. Dodd,et al.  Neutron-induced soft errors, latchup, and comparison of SER test methods for SRAM technologies , 2002, Digest. International Electron Devices Meeting,.

[23]  H. Fuketa,et al.  Angular Dependency of Neutron-Induced Multiple Cell Upsets in 65-nm 10T Subthreshold SRAM , 2012, IEEE Transactions on Nuclear Science.