A Watt-Level Stacked-FET Linear Power Amplifier in Silicon-on-Insulator CMOS
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Jinho Jeong | P.M. Asbeck | C.D. Presti | A. Scuderi | S. Pornpromlikit | P. Asbeck | Jinho Jeong | A. Scuderi | S. Pornpromlikit | C. Presti
[1] Domine M. W. Leenaerts,et al. A 2.4-GHz 0.18-/spl mu/m CMOS self-biased cascode power amplifier , 2003 .
[2] P. E. Allen,et al. A high-efficiency multistage Doherty power amplifier for WCDMA , 2003, Radio and Wireless Conference, 2003. RAWCON '03. Proceedings.
[3] R. Weigel,et al. Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for 3G handset applications , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).
[4] D. Schmelzer,et al. A GaN HEMT Class F Amplifier at 2 GHz With $>\,$80% PAE , 2006, IEEE Journal of Solid-State Circuits.
[5] C. Hu,et al. Projecting gate oxide reliability and optimizing reliability screens , 1990 .
[6] P. Asbeck,et al. A 33-dBm 1.9-GHz silicon-on-insulator CMOS stacked-FET power amplifier , 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.
[7] Huei Wang,et al. Design and Analysis of Stacked Power Amplifier in Series-Input and Series-Output Configuration , 2007, IEEE Transactions on Microwave Theory and Techniques.
[8] A. K. Ezzeddine,et al. The high voltage/high power FET (HiVP) , 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.
[9] Gary Zhang,et al. Dual mode efficiency enhanced linear power amplifiers using a new balanced structure , 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.
[10] M. Berroth,et al. A 900-MHz 29.5-dBm 0.13-μm CMOS HiVP Power Amplifier , 2008, IEEE Transactions on Microwave Theory and Techniques.
[11] Ali Hajimiri,et al. A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier , 2008 .
[12] P. Asbeck,et al. A 20 dBm Linear RF Power Amplifier Using Stacked Silicon-on-Sapphire MOSFETs , 2006, IEEE Microwave and Wireless Components Letters.
[13] C. Weitzel,et al. RF power amplifiers for wireless communications , 2002, 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.
[14] F. Raab. Maximum efficiency and output of class-F power amplifiers , 2001 .
[15] J. G. McRory,et al. Transformer coupled stacked FET power amplifiers , 1999 .
[16] A. Ezzeddine,et al. Ultra-Broadband GaAs HIFET MMIC PA , 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.
[17] E. Jarvinen,et al. Variable gain power amplifier for mobile WCDMA applications , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).
[18] Junxiong Deng,et al. A high average-efficiency SiGe HBT power amplifier for WCDMA handset applications , 2005, IEEE Transactions on Microwave Theory and Techniques.
[19] M. Kimura. Field and temperature acceleration model for time-dependent dielectric breakdown , 1999 .
[20] Peter J. Katzin,et al. A new power amplifier topology with series biasing and power combining of transistors , 1992, IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers.
[21] Ali Hajimiri,et al. Fully integrated CMOS power amplifier design using the distributed active-transformer architecture , 2002, IEEE J. Solid State Circuits.
[22] H. Wong,et al. CMOS scaling into the nanometer regime , 1997, Proc. IEEE.
[23] L.E. Larson,et al. A capacitance-compensation technique for improved linearity in CMOS class-AB power amplifiers , 2004, IEEE Journal of Solid-State Circuits.