Temperature dependence of hot-carrier lifetime due to trapped charge and interface state generation

Hot carrier device lifetime diminishes dramatically as operating temperature decreases. The hot carrier lifetime at liquid nitrogen temperature is usually several orders of magnitude lower than at room temperature. In this work, we show the dependence of hot carrier device lifetime of LDD nMOSFETs on temperature and stress condition in the temperature range from 78 K to room temperature. There is a cross-over point at which the worst-case hot carrier stress condition switches from Vg approximately equals 1/2 Vd (Vg Ibmax) to Vg equals Vd with decreasing temperature. Consequently, the dominant damage mechanism switches from interface state generation to trapped charge generation.

[1]  Eiji Takeda,et al.  Hot-Carrier and Wear-Out Phenomena in Submicron VLSI's , 1985, 1985 Symposium on VLSI Technology. Digest of Technical Papers.

[2]  J. Woo,et al.  Dependence of LDD device optimization on stressing parameters at 77 K , 1990, International Technical Digest on Electron Devices.

[3]  H. Chan,et al.  Hot-electron-induced MOSFET degradation at low temperatures , 1985, IEEE Electron Device Letters.

[4]  W.W. Walker,et al.  Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor , 1980, IEEE Transactions on Electron Devices.

[5]  Hai Wang,et al.  Analyzing hot-carrier effects on cold CMOS devices , 1987, IEEE Transactions on Electron Devices.

[6]  F. Hsu,et al.  Evaluation of LDD MOSFET's based on hot-electron-induced degradation , 1984, IEEE Electron Device Letters.

[7]  E. Takeda,et al.  An empirical model for device degradation due to hot-carrier injection , 1983, IEEE Electron Device Letters.

[8]  S. Hanamura,et al.  Performance and hot-carrier effects of small CRYO-CMOS devices , 1987, IEEE Transactions on Electron Devices.

[9]  A. Boudou,et al.  Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2>or=V/sub g/, 1990 .

[10]  Chenming Hu,et al.  Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement , 1985, IEEE Journal of Solid-State Circuits.