BIST for Embedded Word-Oriented DRAM

The problem of exhaustive test generation for detection of coupling faults between cells in word-oriented memories is considered. According to this fault model, contents of any w-bit memory word in a memory with n words, or ability to change this contents, is influenced by the contents of any other s-1 words in the memory. A near optimal iterative method for construction of test patterns is proposed. The systematic structure of the proposed test results in simple BIST implementations.

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