Growth of (100) oriented CdTe on Si using Ge as a buffer layer
暂无分享,去创建一个
[1] I. Bhat,et al. Improved CdTe layers on GaAs and Si using atomic layer epitaxy , 1993 .
[2] R. F. Risser,et al. MOCVD grown CdZn Te/GaAs/Si substrates for large-area HgCdTe IRFPAs , 1993 .
[3] S. Sivananthan,et al. Current status of direct growth of CdTe and HgCdTe on silicon by molecular‐beam epitaxy , 1992 .
[4] R. Korenstein,et al. Growth of (111) CdTe on GaAs/Si and Si substrates for HgCdTe epitaxy , 1992 .
[5] G. S. Higashi,et al. 370 °C clean for Si molecular beam epitaxy using a HF dip , 1991 .
[6] M. Racanelli,et al. Low‐temperature selective epitaxy by ultrahigh‐vacuum chemical vapor deposition from SiH4 and GeH4/H2 , 1991 .
[7] B. Meyerson,et al. Bistable conditions for low‐temperature silicon epitaxy , 1990 .
[8] Hiromu Ishii,et al. Reduction reaction of native oxide at the initial stage of GeH4 chemical vapor deposition on (100) Si , 1990 .
[9] J. Bajaj,et al. Material characteristics of metalorganic chemical vapor deposition Hg1-xCdxTe/GaAs/Si , 1990 .
[10] William J. Kaiser,et al. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy , 1989 .
[11] S. Sivananthan,et al. Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100) , 1989 .
[12] D. C. Houghton,et al. Molecular Beam Epitaxy Growth of Ge on (100) Si , 1989 .
[13] K. Chou,et al. The film/substrate orientation relationships of CdTe grown on Si and GaAs by low pressure metalorganic chemical vapour deposition , 1989 .
[14] Bernard S. Meyerson,et al. Oxygen removal from Si via reaction with adsorbed Ge , 1987 .
[15] Yasuhiro Shiraki,et al. Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE , 1986 .
[16] T. Kuech,et al. Epitaxial growth of Ge on 〈100〉 Si by a simple chemical vapor deposition technique , 1981 .
[17] G. Booker,et al. A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviour , 1967 .