论文信息 - 240 nm wide wavelength range of AlGaInAs MQWs selectively grown by MOVPE

240 nm wide wavelength range of AlGaInAs MQWs selectively grown by MOVPE

We studied the Selective Area Growth of AlGaInAs Multiple Quantum Wells for wide wavelength range applications such as Coarse Wavelength Division Multiplexing. A 3-D vapor phase diffusion model is used to simulate the complete set of mask patterns. Due to high mask density, the long-range effect of Ga and Al compared to In species is a limiting parameter for the total achievable wavelength extension. Based on these simulations, we predicted and experimentally obtained a total PL wavelength shift of 240 nm.

[2] Abderrahim Ramdane,et al. Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis , 2008 .

[3] C. W. Lentz,et al. 40-Gb/s tandem electroabsorption modulator , 2002, IEEE Photonics Technology Letters.

[4] V. K. Gupta,et al. Microbeam high-resolution x-ray diffraction in strained InGaAlAs-based multiple quantum well laser structures grown selectively on masked InP substrates , 2005, Journal of Applied Physics.

[5] F. Poingt,et al. Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy , 2007 .