Microstructural analysis of Ti/Al/Ti/Au ohmic contacts to n-AlGaN/GaN
暂无分享,去创建一个
Haipeng Tang | J. B. Webb | J. Bardwell | D. Ivey | Y. Liu | J. Chen | J. Chen | D. G. Ivey | J. Bardwell | Y. Liu | J. Webb | Haipeng Tang
[1] Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System , 1999 .
[2] G. A. Prinz,et al. Growth of fcc Fe films on diamond , 1994 .
[3] A. Haq,et al. Simple method for direct synthesis of YBa2Cu4O8 at atmospheric oxygen pressure , 1993 .
[4] Theodore J. Schmidt,et al. Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire , 1995 .
[5] Hoi Sing Kwok,et al. Low Resistivity Indium Tin Oxide Films by Pulsed Laser Deposition , 1993 .
[6] M. Asif Khan,et al. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction , 1993 .
[7] H. Morkoç,et al. GaN, AlN, and InN: A review , 1992 .
[8] Gerard J. Sullivan,et al. Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the “advancing” Al/Ti metallization , 1999 .
[9] Jenkins,et al. Electronic structures and doping of InN, InxGa1-xN, and InxAl1-xN. , 1989, Physical review. B, Condensed matter.
[10] J. B. Webb,et al. Growth of high-performance GaN modulation-doped field-effect transistors by ammonia-molecular-beam epitaxy , 2000 .
[11] Paul K. Chu,et al. Microstructure of Ti/Al ohmic contacts for n-AlGaN , 1998 .
[12] M. Asif Khan,et al. Metal semiconductor field effect transistor based on single crystal GaN , 1993 .