Architecting a common-source-line array for bipolar non-volatile memory devices
暂无分享,去创建一个
Yiran Chen | Jun Yang | Youtao Zhang | Bo Zhao | Hai Li
[1] Shoji Ikeda,et al. 2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read , 2007, 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
[2] Peng Li,et al. Nonvolatile memristor memory: Device characteristics and design implications , 2009, 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers.
[3] R. Symanczyk,et al. Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
[4] Yuichi Ito,et al. A 90nm 12ns 32Mb 2T1MTJ MRAM , 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.
[5] D. Stewart,et al. The missing memristor found , 2008, Nature.
[6] M. Kund,et al. Status and outlook of emerging nonvolatile memory technologies , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
[7] K. Shakeri,et al. Compact physical IR-drop models for chip/package co-design of gigascale integration (GSI) , 2005, IEEE Transactions on Electron Devices.
[8] William Song,et al. Negative-resistance read and write schemes for STT-MRAM in 0.13µm CMOS , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).
[9] M. Hosomi,et al. A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
[10] J. Yang,et al. Electrical transport and thermometry of electroformed titanium dioxide memristive switches , 2009 .
[11] Yoshihiro Ueda,et al. A 64Mb MRAM with clamped-reference and adequate-reference schemes , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).