论文信息 - Sequential PPC and process-window-aware mask layout synthesis

Sequential PPC and process-window-aware mask layout synthesis

We present a full-chip implementation of model-based process and proximity compensation. Etch corrections are applied according to a two-dimensional model. Lithography is compensated by optimizing a cost function that expresses the design intent. The cost function penalizes edge placement errors at best dose and defocus as well as displacement of the edges in response to a specified change in a process parameter. This increases immunity to bridging in low contrast areas.

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