Device Physics

5 Equilibrium Carrier Statistics 7 5.1 Calculation of Fermi Level General Case . . . . . . . . . . . . . . . . . . . 7 5.2 Calculation of Fermi Level Special Analytical Cases . . . . . . . . . . . . . 10 5.2.1 CASE(A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.2.2 CASE(A.1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.2.3 CASE(B) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.2.4 CASE(C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.3 Doping and Temperature Dependence of Fermi Level . . . . . . . . . . . . . 12 5.4 Inhomogeneous Semiconductors . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.4.1 Non-Uniform Doping and Quasi-Neutrality . . . . . . . . . . . . . . . 13 5.4.2 Abrupt pn Junction and Depletion Approximation . . . . . . . . . . . 14 5.4.3 Inhomogeneity in Band Edges . . . . . . . . . . . . . . . . . . . . . . 14

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