Frequency-agile terahertz-wave sources and applications to sensitive diagnosis of semiconductor wafers

We have developed ultra-widely tunable THz-wave source using organic nonlinear optical crystals such as 4- dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) and N-benzyl-2-methyl-4-nitroaniline (BNA). The THz-wave difference frequency generation using these crystals covers the ultra-widely tunable range of 0.1-40 THz with frequency agility. Collaborating with Furukawa Co. Ltd., we used the progressive, frequency-agile THz-wave source for industrial applications and produced a sensitive, non-destructive method for examining carrier-density and electrical properties of semiconductors. This method presents novel possibilities for use in the semiconductor industry.