论文信息 - 3.8 A 23.6ppm/°C Monolithically Integrated GaN Reference Voltage Design with Temperature Range from −50°C to 200°C and Supply Voltage Range from 3.9 to 24V

3.8 A 23.6ppm/°C Monolithically Integrated GaN Reference Voltage Design with Temperature Range from −50°C to 200°C and Supply Voltage Range from 3.9 to 24V

The demand for automotive electronics is increasing in autonomous-driving electric vehicles. Automotive electronics use high-power-density DC-DC converters that are required to withstand extreme operating temperatures up to 200°C. As depicted in the top left of Fig. 3.8.1, conventional bandgap and CMOS reference-voltage circuits have a lower operating temperature [1]–[8]. Although power consumption can be effectively reduced from 2.6nW [2] to 192pW [8], the reference-voltage circuits are not suitable for high-power-density applications due to the limited temperature range.

[1] Nobutaka Kuroki,et al. 1.2-V Supply, 100-nW, 1.09-V Bandgap and 0.7-V Supply, 52.5-nW, 0.55-V Subbandgap Reference Circuits for Nanowatt CMOS LSIs , 2013, IEEE Journal of Solid-State Circuits.

[2] Kevin J. Chen,et al. Integrated voltage reference and comparator circuits for GaN smart power chip technology , 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

[3] David Blaauw,et al. A 114-pW PMOS-only, trim-free voltage reference with 0.26% within-wafer inaccuracy for nW systems , 2016, 2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits).

[4] Byungsub Kim,et al. 5.8 A 9.3nW all-in-one bandgap voltage and current reference circuit , 2017, 2017 IEEE International Solid-State Circuits Conference (ISSCC).

[5] Wei Shu,et al. A 5.6 ppm/°C Temperature Coefficient, 87-dB PSRR, Sub-1-V Voltage Reference in 65-nm CMOS Exploiting the Zero-Temperature-Coefficient Point , 2017, IEEE Journal of Solid-State Circuits.

[6] Giuseppe Iannaccone,et al. A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference , 2011, IEEE Journal of Solid-State Circuits.

[7] Byungsub Kim,et al. 18.8 A 192pW Hybrid Bandgap-Vth Reference with Process Dependence Compensated by a Dimension-Induced Side-Effect , 2019, 2019 IEEE International Solid- State Circuits Conference - (ISSCC).