Precipitation of arsenic diffused into silicon from a TiSi2 source

The diffusion into a p‐type Si substrate of arsenic ions implanted into TiSi2 layers has been investigated for several thermal diffusion treatments in the 900–1100 °C temperature range. The drive‐in was performed using either a rapid thermal annealing system or a traditional furnace. Shallow (20–80‐nm depth) junctions were obtained with a high (1019–1020/cm3) dopant concentration at the silicide‐silicon interface. The amount of diffused arsenic atoms measured by Rutherford backscattering spectrometry increases linearly with the square root of the annealing time. A similar relation was found for the amount of electrically active arsenic, as measured by Van der Pauw structure in combination with anodic oxidation. The two quantities differ and the inactive dopants precipitate in the diffused layer as seen by transmission electron microscopy. This behavior might be associated to the high tensile stress induced by the silicide layer on the surface silicon region and to its influence on the solid solubility and...

[1]  V. Privitera,et al.  Titanium silicide as a diffusion source for arsenic , 1990 .

[2]  K. Maex,et al.  Stability of As and B doped Si with respect to overlaying CoSi_2 and TiSi_2 thin films , 1989 .

[3]  James W. Mayer,et al.  Electronic Materials Science: For Integrated Circuits in Si and GaAS , 1989 .

[4]  C. Spinella,et al.  An energy dispersion spectroscopy technique to measure titanium silicide lateral diffusion , 1989 .

[5]  D. Kwong,et al.  Shallow, silicided p+/n junction formation and dopant diffusion in SiO2/TiSi2/Si structure , 1989 .

[6]  K. Maex,et al.  Comparison between p-type dopants for shallow junction formation by diffusion from an ion implanted silicide , 1989 .

[7]  J. Lue,et al.  Silicide doping technology in formation of TiSi2 /n+ p shallow junction by salicide process , 1989 .

[8]  Pandey,et al.  Annealing of heavily arsenic-doped silicon: Electrical deactivation and a new defect complex. , 1988, Physical review letters.

[9]  L. V. Hove,et al.  Limitations of tisi2 as a source for dopant diffusion , 1988 .

[10]  Dim-Lee Kwong,et al.  Silicided shallow junction formation by ion implantation of impurity ions into silicide layers and subsequent drive‐in , 1987 .

[11]  F. d'Heurle,et al.  Boron, phosphorus, and arsenic diffusion in TiSi2 , 1986 .

[12]  A. H. V. Ommen,et al.  Diffusion of ion-implanted As in TiSi 2 , 1986 .

[13]  L. Hung,et al.  Morphological degradation of TiSi2 on 〈100〉 silicon , 1986 .

[14]  T.C. Holloway,et al.  Development of the Self-Aligned Titanium Silicide Process for VLSI Applications , 1985, IEEE Journal of Solid-State Circuits.

[15]  R. Wilson.  Boron, fluorine, and carrier profiles for B and BF2 implants into crystalline and amorphous Si , 1983 .

[16]  S. Mader,et al.  Ion-implanted polysilicon diffusion sources , 1983 .

[17]  S. Solmi,et al.  Precipitation as the Phenomenon Responsible for the Electrically Inactive Arsenic in Silicon , 1983 .

[18]  J. Biersack,et al.  A Monte Carlo computer program for the transport of energetic ions in amorphous targets , 1980 .

[19]  T. Sigmon,et al.  The solid solubility and thermal behavior of metastable concentrations of As in Si , 1980 .

[20]  C. Jacoboni,et al.  A review of some charge transport properties of silicon , 1977 .

[21]  R. Reif,et al.  Proceedings of the First International Symposium on Advanced Materials for ULSI , 1988 .

[22]  C. Hill.  Shallow junctions by ion implantation and rapid thermal annealing , 1987 .

[23]  I. Barin,et al.  Thermochemical properties of inorganic substances , 1973 .

[24]  C. D. Thurmond,et al.  Germanium and silicon liquidus curves , 1960 .