论文信息 - Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

Operation up to 300 °C of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated. Stable noise margins of about 1 V are reported for a two-input or- nor gate operated on - 15 V supply voltage from 27 °C up to 300 °C. In the same temperature range, an oscillation frequency of about 2 MHz is also reported for a three-stage ring oscillator.

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