Proton damage on InGaAs solar cells having a 3 /spl mu/m InP window layer

As part of a continuing program to determine the space radiation resistance of InP/In/sub 0.53/Ga/sub 0.47/As tandem solar cells on Ge substrates, n/p In/sub 0.53/Ga/sub 0.47/As solar cells fabricated by Research Triangle Institute (RTI) were irradiated with protons of various energy. The cells were grown with a 3 /spl mu/m n-InP window layer to mimic the top cell in the tandem cell configuration for both 1 sun, AMO solar absorption and radiation effects. The results have been plotted against proton fluence and "displacement damage dose" which is the product of the nonionizing energy loss (NIEL) and the particle fluence. A characteristic radiation damage curve is then obtained for predicting the effect of irradiation by any particle of any energy on these cells.