The paper discusses the characteristics of single-stripe AlGaAs high-power lasers with a novel window structure, named the 'window grown on facets (WGF)'(Sasaki et al., 1991), in which window layers are epitaxially grown on cleaved (110) facets, independent of the internal laser structure. The WGF technique was applied to the V-channeled substrate inner stripe (VSIS) lasers in the wavelength range 780-830 nm. Excellent high-power and high-reliability characteristics of the VSIS lasers with WGF structure were demonstrated. Results of reliability obtained at 100 mW (830 nm) and at 70 mW (at 780 nm) are considered of significance for the development of communications, SHG, and optical storage memory systems.