Accurate MOS Transistor Modeling and Parameter Extraction Valid up to 10 GHz

Accurate modeling and efficient parameter ex­ traction of the small signal equivalent circuit of MOS transistors for high-frequency opera­ tion are presented. The equivalent circuit is based on a quasi-static ,approximation which was found to be adequate up to 10 GHz for a 20-GHz IT MOS transistor, if the extrinsic components and substrate coupling effects are properly included. Direct extraction is per­ formed by y-parameter analysis on the equiv­ alent circuit in the linear and saturation re­ gions of operation. Good agreement has been obtained between the simulation results of the equivalent circuit and measured data up to 10 GHz.

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