论文信息 - Impact of laterally asymmetric channel and gate stack architecture on device performance of surrounding gate MOSFETs

Impact of laterally asymmetric channel and gate stack architecture on device performance of surrounding gate MOSFETs

A new device design laterally asymmetric channel gate stack (LACGAS) SGT is proposed, and its impact on device performance is examined. By using analytical modeling and numerical simulations, the novel features of this structure are studied, and it is demonstrated that LACGAS offers superior performance when compared with conventional devices. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 746–750, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25022

Subhasis Haldar | R. S. Gupta | Harsupreet Kaur | Sneha Kabra

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