A Compositional Model of MOS Circuits

This paper describes a compositional model for MOS circuits. Following Bryant in [1] it covers some effects of capacitance and resistance used frequently in designs. Bryant’s model has formed the basis of several hardware simulators. From the point of view of verification, however, it suffers the inadequacy that it is not compositional, an expression which will be explained further. This makes it hard to use the model to reason in a structured way.

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