Calculated temperature dependence of threshold current of GaAs‐AlxGa1−xAs double heterostructure lasers

The threshold current density Jth(T) of the GaAs‐AlxGa1−xAs double heterostructure laser is calculated by including both drift and diffusion mechanism for carrier leakage. For x<0.25 (ΔEg<0.3 eV), Jth increases rapidly with further decrease in the aluminum fraction x in the ternary layers, in general agreement with previous work. The ratio Jth (70 °C)/Jth (22 °C) also increases rapidly for x<0.25. The carrier concentration in the P ternary is an important quantity in determining both the temperature dependence of threshold as well as room‐temperature threshold. In order to achieve a T0≳150 K for x=0.28, the P‐ternary carrier concentration should be greater than 1.5×1017 cm−3.

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