Properties of Yttrium Oxide Thin Films on Silicon (100) Prepared by Evaporation of Yttrium in Atomic Oxygen

Thin layers of Y 2 O 3 have been prepared on silicon (100) by an activated reactive evaporation process involving evaporation of metal Y in an atomic oxygen plasma. The presence of the oxygen plasma was found to be crucial for the formation of homogeneous Y 2 O 3 films on Si. The formation of Y 2 O 3 films on Si (100) at different substrate temperatures was investigated. X-ray diffraction analysis showed that Y 2 O 3 films formed between 300 °C and 650 °C were (111) textured while Y 2 O 3 prepared at lower substrate temperatures (80 °C) exhibited mixed orientations. Rutherford backscattering spectrometry indicated that films were stoichiometric. No pronounced channeling was observed in films grown at 350 °C, suggesting polycrystalline film structures. Atomic force microscopy revealed very smooth surface morphologies with average surface roughness

[1]  E. Broitman,et al.  Deposition of Y2O3 by plasma enhanced organometallic chemical vapor deposition using an electron cyclotron resonance source , 1993 .

[2]  R. Stevens,et al.  Growth and dielectric characterization of yttrium oxide thin films deposited on Si by r.f.-magnetron sputtering , 1993 .

[3]  L. Stolt,et al.  Preparation of YBa2Cu3O7−x films and YBa2Cu3O7−x/Y2O3 multilayers using coevaporation and atomic oxygen , 1993 .

[4]  N. Fujimura,et al.  Epitaxial growth of yttrium silicide YSi2−x on (100) Si , 1993 .

[5]  Joachim Wecker,et al.  Orientation relationships of epitaxial oxide buffer layers on silicon (100) for high‐temperature superconducting YBa2Cu3O7−x films , 1992 .

[6]  J. Locquet,et al.  Characterization of a radio frequency plasma source for molecular beam epitaxial growth of high‐Tc superconductor films , 1992 .

[7]  K. Harada,et al.  Growth of Buffer Layers on Si Substrate for High-Tc Superconducting Thin Films , 1991 .

[8]  S. T. Lakshmikumar,et al.  Electrical behaviour of electron-beam-evaporated yttrium oxide thin films on silicon , 1991 .

[9]  D. Fork,et al.  Reactions at the interfaces of thin films of Y‐Ba‐Cu‐ and Zr‐oxides with Si substrates , 1991 .

[10]  Takahiro Nakayama,et al.  Dielectric properties of rf‐sputtered Y2O3 thin films , 1990 .

[11]  T. S. Kalkur,et al.  Characteristics of Reactively Evaporated and Rapid-Thermally Oxidized Yttrium Films on Silicon , 1990, Other Conferences.

[12]  Yukio Osaka,et al.  Heteroepitaxial growth of Y2O3 films on silicon , 1989 .

[13]  L. Manchanda,et al.  Study of thermally oxidized yttrium films on silicon , 1987 .