Modeling of dark characteristics of mercury cadmium telluride n+–p junctions

Dark dynamic impedance versus applied bias voltage characteristics of HgCdTe n þ –p junctions has been modelled here using a recently proposed [Infrared Phys. Technol. 43 (6) (2002) 317–326] analytical approach. The results of the analysis on two pixels from the same array are discussed to illustrate the advantage of this approach in identifying the possible source of variation of diode impedance among the diodes in an array. It has been shown that the contribution of dark current contributing mechanisms can be separated from each other in each diode. An idea of the dominant mechanism of the two sources of the ohmic current, namely surface leakage currents and contribution of dislocations intersecting the junction can also be had from temperature dependent study of shunt impedance. 2002 Elsevier Science B.V. All rights reserved.