Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements

Excitonic emission dynamics in homoepitaxial AlN films grown on a freestanding substrate prepared by the physical-vapor-transport method were examined. Reflecting the low threading dislocation density (<104 cm−2), room-temperature cathodoluminescence intensity images mapped at the free A-exciton energy exhibited homogeneous contrasts. Low-temperature cathodoluminescence peaks at 6.0415 and 6.0287 eV, which were polarized parallel and perpendicular, respectively, to the c-axis, exhibited identical risetimes and short lifetimes; the latter coincided with the temporal delay of neutral donor-bound exciton emissions. These results support the assumption that the two peaks originate from the recombination of free A-excitons of irreducible representations Γ1 and Γ5, respectively.

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