Evaluation of EUV mask defect using blank inspection, patterned mask inspection, and wafer inspection

The key challenge before EUVL is to make defect-free masks, for which it is important to identify the root cause of defects, and it is also necessary to establish suitable critical mask defect size for the production of ULSI devices. Selete has been developing EUV mask infrastructures such as a full-field actinic blank inspection tool and 199nm wavelength patterned mask inspection tool in order to support blank/mask supplier in reducing blank/mask defects which impact on wafer printing. In this paper, by evaluating the printability of programmed phase defects and absorber defects exposed by full-field scanner EUV1, we demonstrate that defect detection sensitivities of ABI (actinic blank inspection) and PI (patterned mask inspection) are higher than that of WI (wafer inspection) in HP32nm. The evaluations were done by comparing the detection sensitivities of full-field actinic blank inspection tool, 199nm wavelength patterned mask inspection tool, and wafer EB inspection tool. And then, based on the native defect analysis of blank/mask, we ascertained that actinic blank inspection and patterned mask inspection developed at Selete, are effective in detecting killer defects both at the main pattern and at light-shield border area.

[1]  Osamu Suga,et al.  Impact of extreme ultraviolet mask absorber defect with pattern roughness on lithographic images , 2010 .

[2]  Osamu Suga,et al.  Thin absorber EUV mask with light-shield border of etched multilayer and its lithographic performance , 2010, Photomask Japan.

[3]  Takashi Kamo,et al.  Actinic phase defect detection and printability analysis for patterned EUVL mask , 2010, Advanced Lithography.

[4]  Osamu Suga,et al.  Improvement of actinic blank inspection and phase defect analysis , 2010, Photomask Technology.

[5]  Osamu Suga,et al.  Study of EUVL mask defect inspection using 199-nm inspection tool with super-resolution method , 2009, Photomask Technology.

[6]  Seong-Woon Choi,et al.  The analysis of EUV mask defects using a wafer defect inspection system , 2010, Advanced Lithography.

[7]  Kazuo Tawarayama,et al.  Printability of EUVL mask defect detected by actinic blank inspection tool and 199-nm pattern inspection tool , 2010, Photomask Technology.

[8]  Sudhar Raghunathan,et al.  Assessing EUV mask defectivity , 2010, Advanced Lithography.

[9]  Takashi Kamo,et al.  Phase defect printability and actinic dark-field mask blank inspection capability analyses , 2011, Advanced Lithography.

[10]  Noriaki Takagi,et al.  EB defect inspection of EUV resist patterned wafer for hp 32 nm and beyond , 2011, Advanced Lithography.

[11]  Kazuo Tawarayama,et al.  Recent progress of EUV full-field exposure tool in Selete , 2009, Advanced Lithography.

[12]  Eric Hendrickx,et al.  Natural EUV mask blank defects: evidence, timely detection, analysis and outlook , 2010, Photomask Technology.

[13]  Minoru Sakamoto,et al.  Improvement of total quality on EUV mask blanks toward volume production , 2010, Advanced Lithography.

[14]  Sungmin Huh,et al.  A study of defects on EUV masks using blank inspection, patterned mask inspection, and wafer inspection , 2010, Advanced Lithography.