Low-resistivity α-phase tungsten films grown by hot-wire assisted atomic layer deposition in high-aspect-ratio structures
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Jurriaan Schmitz | Alexeij Y. Kovalgin | Mengdi Yang | Antonius A.I. Aarnink | J. Schmitz | A. Kovalgin | A. Kovalgin | Mengdi Yang | A. Aarnink
[1] C. Ting,et al. Selective Electroless Metal Deposition for Integrated Circuit Fabrication , 1989 .
[2] R. Wolters,et al. Hot‐wire assisted ALD of tungsten films: In‐situ study of the interplay between CVD, etching, and ALD modes , 2015 .
[3] M. O’Keefe,et al. Phase transformation of sputter deposited tungsten thin films with A‐15 structure , 1996 .
[4] J. V. Ommen,et al. Atomic and molecular layer deposition: off the beaten track. , 2016, Chemical communications.
[5] T. Hahn. International tables for crystallography , 2002 .
[6] B. Van Hao. Atomic layer deposition of TiN films: Growth and electrical behavior down to sub-nanometer scale , 2013 .
[7] Y. Shimogaki,et al. Kinetic study on hot-wire-assisted atomic layer deposition of nickel thin films , 2014 .
[8] J. Falconer,et al. Using atomic layer deposited tungsten to increase thermal conductivity of a packed bed , 2015 .
[9] N. Kwak,et al. A Comparative Study of the Atomic-Layer-Deposited Tungsten Thin Films as Nucleation Layers for W-Plug Deposition , 2006 .
[10] H. Swanson,et al. Standard X‐Ray Diffraction Powder Patterns , 1954 .
[11] H. Kaplan,et al. The preparation and characterization of beta-tungsten, a metastable tungsten phase , 1974, Metallurgical and Materials Transactions B.
[12] A. J. Hegedüs,et al. Über die Bildungsbedingungen und Eigenschaften des β‐Wolframs. Weiterer Beitrag zur Reduktion des Wolframtrioxyds , 1957 .
[13] S. Pollack,et al. Superconductivity in β‐Tungsten Films , 1968 .
[14] Qiang Xu,et al. Application of Atomic Layer Deposition Tungsten (ALD W) as Gate Filling Metal for 22 nm and Beyond Nodes CMOS Technology , 2014 .
[15] S. George,et al. Nucleation and growth during tungsten atomic layer deposition on SiO2 surfaces , 2001 .
[16] Steven M. George,et al. Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction , 2000 .
[17] A. L. Patterson. The Scherrer Formula for X-Ray Particle Size Determination , 1939 .
[18] P. Griffin,et al. Silicon VLSI Technology: Fundamentals, Practice, and Modeling , 2020 .
[19] T. T. Sheng,et al. Microstructure, growth, resistivity, and stresses in thin tungsten films deposited by rf sputtering , 1973 .
[20] F. Wooten,et al. Optical Properties of Solids , 1972 .
[21] A. Ignatiev,et al. Direct-current-magnetron deposition of molybdenum and tungsten with rf-substrate bias , 1984 .
[22] G. Xiao,et al. Beta (β) tungsten thin films: Structure, electron transport, and giant spin Hall effect , 2015 .
[23] Yiping Zhao,et al. Thickness dependent electrical resistivity of ultrathin (<40 nm) Cu films , 2001 .
[24] Mikko Ritala,et al. Atomic layer deposition (ALD): from precursors to thin film structures , 2002 .
[25] R. Wolters,et al. Atomic Layer Deposition of W1.5N Barrier Films for Cu Metallization: Process and Characterization , 2005 .
[26] R. Wolters,et al. Hot‐Wire Assisted ALD: A Study Powered by In Situ Spectroscopic Ellipsometry , 2017 .
[27] R. Wolters,et al. Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor , 2016 .
[28] Y. Mai,et al. Influences of oxygen on the formation and stability of A15 β-W thin films , 2000 .
[29] S. George,et al. Kinetics of the WF6 and Si2H6 surface reactions during tungsten atomic layer deposition , 2001 .
[30] Gerald Earle Jellison,et al. Optical functions of silicon between 1. 7 and 4. 7 eV at elevated temperatures , 1983 .
[31] D. Schroder. Semiconductor Material and Device Characterization , 1990 .
[32] W. Schubert,et al. Tungsten: Properties, Chemistry, Technology of the Element, Alloys, and Chemical Compounds , 1999 .
[33] Non-ohmic transport behavior in ultra-thin gold films , 2011 .
[34] Andre Stesmans,et al. Degradation of the thermal oxide of the Si/SiO2/Al system due to vacuum ultraviolet irradiation , 1995 .
[35] R. Wolters,et al. Hot-Wire generated atomic hydrogen and its impact on thermal ALD in TiCl4/NH3 System , 2013 .
[36] I. Langmuir,et al. THE DISSOCIATION OF HYDROGEN INTO ATOMS. Part I. Experimental. , 1914 .
[37] I. Langmuir. THE DISSOCIATION OF HYDROGEN INTO ATOMS. [PART II.] CALCULATION OF THE DEGREE OF DISSOCIATION AND THE HEAT OF FORMATION. , 1915 .
[38] Jurriaan Schmitz,et al. Conduction and electric field effect in ultra-thin TiN films , 2013 .
[39] W. Shockley,et al. Mobile electric charges on insulating oxides with application to oxide covered silicon p-n junctions☆ , 1964 .
[40] I. Langmuir. THE DISSOCIATION OF HYDROGEN INTO ATOMS.1 , 1912 .
[41] S. George. Atomic layer deposition: an overview. , 2010, Chemical reviews.
[42] D. Hess,et al. Plasma-Enhanced Chemical Vapor Deposition of Beta-Tungsten, a Metastable Phase, , 1984 .
[43] C. Cabral,et al. Phase transformation of thin sputter-deposited tungsten films at room temperature , 2002 .
[44] C. Oldham,et al. Low‐Temperature Atomic Layer Deposition of Tungsten using Tungsten Hexafluoride and Highly‐diluted Silane in Argon , 2013 .