论文信息 - Comparison of the picosecond characteristics of silicon and silicon‐on‐sapphire metal‐semiconductor‐metal photodiodes

Comparison of the picosecond characteristics of silicon and silicon‐on‐sapphire metal‐semiconductor‐metal photodiodes

The picosecond characteristics of silicon‐based metal‐semiconductor‐metal (MSM) diodes with submicrometer finger spacing and width were studied. Diodes made on both bulk silicon and silicon‐on‐sapphire (SOS) substrates were measured by a subpicosecond electro‐optic sampling system. The response of bulk‐silicon MSM diodes was strongly dependent on the wavelength of the excitation light because of the change in penetration depth. The response of SOS diodes, on the other hand, had a weak dependence on wavelength since the thickness of the silicon layer limits the depth of photogenerated carriers. The response of a 200 nm SOS diode has a full‐width at half‐maximum of 4.5 and 5.7 ps with blue‐ and red‐light excitations. The external quantum efficiency of SOS diodes was also determined at several selected wavelengths.

Thomas Y. Hsiang | Sotiris Alexandrou | Chia-Chi Wang | D. Jacobs-Perkins

[1] K. Kaufmann. Photodetectors and Power Meters , 1993 .

[2] S. Brueck,et al. A simple high-speed Si Schottky photodiode , 1991, IEEE Photonics Technology Letters.

[3] John C. Bean,et al. Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors , 1980 .

[4] Muqing Liu,et al. A 75 GHz silicon metal‐semiconductor‐metal Schottky photodiode , 1993 .

[5] B. K. Garside,et al. Ultrafast silicon interdigital photodiodes for ultraviolet applications , 1985 .

[6] S. M. Sze,et al. Physics of semiconductor devices , 1969 .

[7] Thomas F. Carruthers,et al. 32 GHz metal-semiconductor-metal photodetectors on crystalline silicon , 1992 .

[8] D. Auston,et al. An amorphous silicon photodetector for picosecond pulses , 1980 .

[9] Donald R. Larson,et al. Submicrometer Interdigital Silicon Detectors For The Measurement Of Picosecond Optical Pulses , 1983, Optics & Photonics.

[10] R. Sobolewski,et al. Nanoscale metal-semiconductor-metal photodetectors with subpicosecond response time fabricated using electron beam lithography , 1992 .

[11] J. Harbison,et al. High quantum efficiency amorphous silicon photodetectors with picosecond response times , 1984 .

[12] W. Maszara,et al. Bonding of silicon wafers for silicon‐on‐insulator , 1988 .

[13] A. Glass,et al. Periodically structured amorphous silicon detectors with improved picosecond responsivity , 1984 .