Radiation induced recombination processes in AIN ceramics

Luminescence processes are studied for aluminum nitride, AlN, ceramics after exposure to ionizing radiation and ultraviolet radiation (UVR) using the methods of photoluminescence (PL), optically stimulated luminescence (OSL) and thermoluminescence (TL). The luminescence processes are explained in terms of radiation-induced charge transfer and radiative recombination of the donor-acceptor pairs, based on oxygen-related defects of the AlN crystalline lattice. The comparative effects of the two types of radiation, the efficiency of TL and OSL and the optimal sintering procedure of the ceramics are discussed for an AlN ceramic proposed for potential application in dosimetry.