论文信息 - AlGaAs grown by metalorganic chemical vapor deposition for visible laser

AlGaAs grown by metalorganic chemical vapor deposition for visible laser

Doping efficiency of selenium hydride (for Se donors) to GaAs in metalorganic chemical vapor deposition was shown to be high and near unity, whereas that of sulfur hydride (for S donors) was nearly two orders lower. The difference was even greater with the addition of aluminum to grow AlxGa1−xAs. Doping efficiency of diethyl zinc (for Zn acceptors) was shown to be three to four orders lower than of Se. A higher partial flow ratio of arsenic to column III elements was necessary to grow high‐quality layers of AlxGa1−xAs with larger x. Room‐temperature cw operation of AlxGa1−xAs/AlyGa1−yAs double heterostructure visible (760–780 nm) lasers grown by MOCVD has been achieved. The planar lasers, with an oxide‐insulated stripe structure 10 μm wide and 250 μm long showed a cw threshold current from 150 to 300 mA.

Y. Mori | N. Watanabe

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