Graphite edge controlled registration of monolayer MoS2 crystal orientation

Transition metal dichalcogenides such as the semiconductor MoS2 are a class of two-dimensional crystals. The surface morphology and quality of MoS2 grown by chemical vapor deposition are examined using atomic force and scanning tunneling microscopy techniques. By analyzing the moire patterns from several triangular MoS2 islands, we find that there exist at least five different superstructures and that the relative rotational angles between the MoS2 adlayer and graphite substrate lattices are typically less than 3°. We conclude that since MoS2 grows at graphite step-edges, it is the edge structure which controls the orientation of the islands, with those growing from zig-zag (or armchair) edges tending to orient with one lattice vector parallel (perpendicular) to the step-edge.

[1]  M. Batzill,et al.  Direct observation of interlayer hybridization and Dirac relativistic carriers in graphene/MoS₂ van der Waals heterostructures. , 2015, Nano letters.

[2]  Lain‐Jong Li,et al.  Graphene/MoS2 Heterostructures for Ultrasensitive Detection of DNA Hybridisation , 2014, Advanced materials.

[3]  A. Neto,et al.  Electronic transport in graphene-based heterostructures , 2014, 1406.2490.

[4]  Yu-Lun Chueh,et al.  Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures , 2014, Scientific Reports.

[5]  M. Batzill,et al.  Interface properties of CVD grown graphene transferred onto MoS2(0001). , 2014, Nanoscale.

[6]  Chendong Zhang,et al.  Direct imaging of band profile in single layer MoS2 on graphite: quasiparticle energy gap, metallic edge states, and edge band bending. , 2014, Nano letters.

[7]  T. Ren,et al.  A small-signal generator based on a multi-layer graphene/molybdenum disulfide heterojunction , 2013 .

[8]  SUPARNA DUTTASINHA,et al.  Van der Waals heterostructures , 2013, Nature.

[9]  K. Novoselov,et al.  Doping mechanisms in graphene-MoS2 hybrids , 2013, 1304.2236.

[10]  Young-Jun Yu,et al.  Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices , 2013, Nature Communications.

[11]  A. Kis,et al.  Nonvolatile memory cells based on MoS2/graphene heterostructures. , 2013, ACS nano.

[12]  Lain-Jong Li,et al.  Highly Efficient Electrocatalytic Hydrogen Production by MoSx Grown on Graphene‐Protected 3D Ni Foams , 2013, Advanced materials.

[13]  Yu Huang,et al.  Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters , 2012, Nature materials.

[14]  Jing Kong,et al.  van der Waals epitaxy of MoS₂ layers using graphene as growth templates. , 2012, Nano letters.

[15]  Lain‐Jong Li,et al.  Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition , 2012, Advanced materials.

[16]  E. Aktürk,et al.  A Comparative Study of Lattice Dynamics of Three- and Two-Dimensional MoS2 , 2011 .

[17]  F. Besenbacher,et al.  Cluster-support interactions and morphology of MoS2 nanoclusters in a graphite-supported hydrotreating model catalyst. , 2006, Journal of the American Chemical Society.

[18]  P. Krüger,et al.  Band structure of MoS 2 , MoSe 2 , and α − MoTe 2 : Angle-resolved photoelectron spectroscopy and ab initio calculations , 2001, cond-mat/0107541.

[19]  Wold,et al.  Electronic structure of MoSe2, MoS2, and WSe2. I. Band-structure calculations and photoelectron spectroscopy. , 1987, Physical review. B, Condensed matter.

[20]  B. Alder,et al.  THE GROUND STATE OF THE ELECTRON GAS BY A STOCHASTIC METHOD , 2010 .

[21]  L. Mattheiss.  Band Structures of Transition-Metal-Dichalcogenide Layer Compounds. , 1973 .

[22]  Joseph Callaway,et al.  Inhomogeneous Electron Gas , 1973 .

[23]  R. B. Murray,et al.  The band structures of some transition metal dichalcogenides. III. Group VIA: trigonal prism materials , 1972 .

[24]  W. Kohn,et al.  Self-Consistent Equations Including Exchange and Correlation Effects , 1965 .