Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment

Abstract During the lifetime of integrated circuits in the space environment, they encounter radiation degradation, such as the total ionizing dose (TID) effect as well as intrinsic degradation mechanisms, such as the constant voltage stress (CVS) effect. This paper analyzes the effects of TID and CVS on the nFinFET with a high-κ (HfO2) metal gate (HKMG). Various dimensions and stress voltages on nFinFETs are characterized under room temperature. Experimental results show that both effects can cause the threshold voltage (Vth) of the transistor to shift towards positive. Compared with TID-induced degradation, the devices appear relatively robust against CVS.

[1]  J. S. Kauppila,et al.  Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance , 2017, IEEE Transactions on Nuclear Science.

[2]  Luca Selmi,et al.  Investigation of Hot Carrier Stress and Constant Voltage Stress in High- $\kappa$ Si-Based TFETs , 2015, IEEE Transactions on Device and Materials Reliability.

[3]  G. Curello,et al.  A 22nm SoC platform technology featuring 3-D tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications , 2012, 2012 International Electron Devices Meeting.

[4]  Yoon-Ha Jeong,et al.  Fin Width and Bias Dependence of the Response of Triple-Gate MOSFETs to Total Dose Irradiation , 2011, IEEE Transactions on Nuclear Science.

[5]  Taiki Uemura,et al.  Reliability characterization of 10nm FinFET technology with multi-VT gate stack for low power and high performance , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[6]  G. Ghibaudo,et al.  Review on high-k dielectrics reliability issues , 2005, IEEE Transactions on Device and Materials Reliability.

[7]  Richard Southwick,et al.  Total Ionizing Dose Radiation Effects on 14 nm FinFET and SOI UTBB Technologies , 2015, 2015 IEEE Radiation Effects Data Workshop (REDW).

[8]  B. L. Bhuva,et al.  Length and fin number dependence of ionizing radiation-induced degradation in bulk FinFETs , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

[9]  G. Bersuker,et al.  Radiation Induced Charge Trapping in Ultrathin ${\rm HfO}_{2}$-Based MOSFETs , 2007, IEEE Transactions on Nuclear Science.

[10]  Jean-Pierre Colinge,et al.  FinFETs and Other Multi-Gate Transistors , 2007 .

[11]  Cor Claeys,et al.  Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs , 2007 .

[12]  A. Mercha,et al.  Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective , 2006, IEEE Transactions on Electron Devices.

[13]  M. Werner,et al.  High-k dielectrics' radiation response to X-ray and γ-ray exposure , 2009, 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

[14]  Mireia Bargallo Gonzalez,et al.  Impact of electrical stress on the electrical characteristics of 2 MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics , 2013 .

[15]  J. Li,et al.  The total ionizing dose response of a DSOI 4Kb SRAM , 2017, Microelectron. Reliab..

[16]  Qi Guo,et al.  Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation , 2018, IEEE Transactions on Nuclear Science.

[17]  D. R. Ball,et al.  Geometry Dependence of Total-Dose Effects in Bulk FinFETs , 2014, IEEE Transactions on Nuclear Science.

[18]  Wenqi Zhang,et al.  Influence of fin number on hot-carrier injection stress induced degradation in bulk FinFETs , 2016, Microelectron. Reliab..

[19]  高见头,et al.  Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs , 2015 .